1 pnz300, pnz300f (pn300, pn300f) silicon pin photodiodes for optical control systems features fast response which is well suited to high speed modulated light detection wide spectral sensitivity low dark current and low noise good photo current linearity and wide dynamic sensitivity narrow directivity (pnz300) wide directivity (pnz300f) pin photodiodes absolute maximum ratings (ta = 25?c) parameter symbol ratings unit reverse voltage (dc)v r 50 v power dissipation p d 100 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c pnz300f glass window 4.5 0.2 1: anode 2: cathode unit : mm unit : mm 4.6 0.15 glass lens 2.54 0.25 1.0 0.2 1.0 0.15 1.0 0.2 1.0 0.15 5.75 max. 2- 0.45 0.05 6.3 0.3 12.7 min. 45 3 1 2 pnz300 1: anode 2: cathode 4.6 0.15 2.54 0.25 5.75 max. 2- 0.45 0.05 12.7 min. 45 3 1 2 note)the part numbers in the parenthesis show conventional part number.
2 pnz300, pnz300f pin photodiodes electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i d v r = 10v 0.1 10 na photo current pnz300 i l v r = 10v, l = 1000 lx *1 30 55 a pnz300f 57 a peak sensitivity wavelength p v r = 10v 800 nm response time t r , t f *2 v r = 20v, r l = 50 ? 1ns capacitance between pins c t v r = 10v, f = 1mhz 7 pf acceptance half angle pnz300 measured from the optical axis to the half power point 10 deg. pnz300f 40 deg. *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit 50 ? p = 800nm t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) sig.in ' ) ' "* ) 0
2+5! :
+ * c d c = ( e!
( *# * / 6 1 # 4,
!%& # 1 6 / * -# : e :
8
: a) v r = 10v ta = 25?c t = 2856k 10 3 10 2 10 1 10 C1 10 10 3 10 4 10 2 10 C2 1 10 2 10 1 10 C1 11010 2 10 C2 10 C1 ta = 25?c i d v r reverse voltage v r (v) dark current i d (na) pnz 0300 pnz 300f
3 pin photodiodes pnz300, pnz300f i d ta 10 3 10 2 10 1 10 C1 10 C2 ambient temperature ta (?c ) v r = 10v dark current i d (na) C 40 20 60 100 C 20 04080 10 C3 f c r l 10 3 10 2 10 1 10 C1 10 C2 external load resistance r l ( ? ) v r = 10v ta = 25?c cutoff frequency f c (mhz) 10 10 4 10 6 10 7 10 2 10 3 10 5 10 C3 i l v r 50 40 30 20 10 reverse voltage v r (v) v r = 10v, ta = 25?c, t = 2856k photo current i l ( a) 0203050 10 40 0 i l ta 100 80 60 40 20 ambient temperature ta (?c ) photo current i l ( a) C 20 0 20 60 80 40 100 0 C 40 v r = 10v c t v r 10 3 10 2 10 1 reverse voltage v r (v) capacitance between pins c t (pf) 11010 2 10 C1 10 C1 ta = 25?c spectral sensitivity characteristics 100 80 60 40 20 wavelength (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v ce = 10v ta = 25?c directivity characteristics 100 80 60 40 20 0 80 40 0 40 80 angle (deg.) relative sensitivity s (%) pnz 0300 pnz 0300 l = 1000 lx l = 500 lx l = 100 lx pnz 300f pnz 0300 pnz 300f pnz 0300 pnz 300f pnz 300f pnz 0300
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